SIHB24N65E-E3 - Vishay / Siliconix

Mfr. #:
SIHB24N65E-E3
Description:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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SIHB24N65E-E3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Width: 9.65 mm
Rise Time: 84 ns
Qg - Gate Charge: 81 nC
Vds - Drain-Source Breakdown Voltage: 700 V
Typical Turn-Off Delay Time: 70 ns
Fall Time: 69 ns
Height: 4.83 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Pd - Power Dissipation: 250 W
Typical Turn-On Delay Time: 24 ns
Id - Continuous Drain Current: 24 A
Rds On - Drain-Source Resistance: 145 mOhms
Factory Pack Quantity: 1000
Length: 10.67 mm
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB24N65E-E3 Price & Stock

Vishay SIHB24N65E-E3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB24N65E-E3-ND----20.9020.902019-11-16T13:35:01Z
AvnetSIHB24N65E-E3----21.7319.142019-11-16T02:23:49Z
SourceabilitySIHB24N65E-E33,000-----2019-11-11T17:37:31Z
LTL Group4285251501-----2019-11-15T08:57:11Z
C Plus ElectronicsSIHB24N65E-E3Contact-----2018-05-06T19:06:36Z
North Star MicroSIHB24N65E-E3Contact-----2015-05-20T05:52:12Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB24N65E-E3 due to regional differences or acquisition. SIHB24N65E-E3 may also be known as the following names:

  • VIS SIHB24N65E-E3
  • VISH SIHB24N65E-E3
  • VISHAY INTERTECHNOLOGY INC SIHB24N65E-E3
  • VISHA SIHB24N65E-E3
  • VISHAY THIN FILM SIHB24N65E-E3
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  • VISHY SIHB24N65E-E3
  • VISAHY SIHB24N65E-E3
  • VISH/IR SIHB24N65E-E3
  • VSHY SIHB24N65E-E3
  • VSH SIHB24N65E-E3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB24N65E-E3
  • VISHAY ELECTRONIC SIHB24N65E-E3
  • VSHAY SIHB24N65E-E3
  • VISHAY FOIL RESISTORS SIHB24N65E-E3
  • VISHAY AMERICAS INC SIHB24N65E-E3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHB24N65E-E3
  • VISHAY AMERICAS SIHB24N65E-E3
  • VISHAY ELECTRO-FILMS SIHB24N65E-E3
  • VISHAY COMPONENTS SIHB24N65E-E3
  • Vishay Semiconductors SIHB24N65E-E3
  • VISHAY COMPONENTS NEDERLAND SIHB24N65E-E3
  • VISHAY INTERTEC SIHB24N65E-E3
  • VISHAY FOIL RESISTORS / VPG SIHB24N65E-E3
  • VISHAY OPTO SIHB24N65E-E3
  • Vishay Intertechnology Inc. SIHB24N65E-E3