BSC009NE2LS5IATMA1 - Infineon Technologies

Mfr. #:
BSC009NE2LS5IATMA1
Description:
MOSFET LV POWER MOS
Lifecycle:
New from this manufacturer.
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BSC009NE2LS5IATMA1 Information

OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Specifications

RoHS: Y
Package / Case: TDSON-8
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Series: OptiMOS 5
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Channel Mode: Enhancement
Part # Aliases: BSC009NE2LS5I SP001212434
Rds On - Drain-Source Resistance: 950 uOhms
Forward Transconductance - Min: 75 S
Pd - Power Dissipation: 74 W
Factory Pack Quantity: 5000
Length: 5.9 mm
Width: 5.15 mm
Rise Time: 5 ns
Typical Turn-On Delay Time: 5 ns
Fall Time: 4 ns
Qg - Gate Charge: 36 nC
Typical Turn-Off Delay Time: 27 ns
Vds - Drain-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 100 A
Vgs - Gate-Source Voltage: 10 V
Height: 1.27 mm
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.003527 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

BSC009NE2LS5IATMA1 Price & Stock

Infineon BSC009NE2LS5IATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3BSC009NE2LS5IATMA1CT-ND48515.6113.9910.297.397.392020-01-31T16:12:59Z
Digi-KeyBSC009NE2LS5IATMA1DKR-ND48515.6113.9910.297.397.392020-01-31T16:12:59Z
Digi-KeyBSC009NE2LS5IATMA1TR-ND-----6.302020-01-31T16:12:59Z
VericalBSC009NE2LS5IATMA13,327-12.089.866.986.852020-01-31T17:55:34Z
Arrow ElectronicsBSC009NE2LS5IATMA13,32713.9512.089.866.986.852020-01-31T15:56:44Z
RS Components 313365777,955----7.982020-01-31T14:41:04Z
RS Components1339881--13.4210.739.609.602020-01-31T14:41:04Z
RS Components1339881P--13.4210.739.609.602020-01-31T14:41:04Z
Mouser726-BSC009NE2LS5IATM4,16215.0712.8110.257.436.932020-01-31T21:51:08Z
element14 APAC27258003,46317.1114.5511.648.457.282020-02-01T02:24:55Z
AvnetBSC009NE2LS5IATMA1-----7.122020-01-31T04:58:23Z
Farnell 2272580010,287-13.8410.467.306.422020-02-01T02:54:58Z
Farnell2725800RL--13.8410.467.306.422020-02-01T02:54:58Z
Newark 213AC83233,48815.0712.8110.257.437.432020-01-31T03:51:19Z
Newark38AH7644-----7.112020-01-31T03:51:19Z
Avnet EuropeSP001212434-----8.632020-01-31T08:23:55Z
LTL Group38990001,122-----2020-01-31T03:27:32Z
TMEBSC009NE2LS5IATMA1------2020-01-31T11:40:17Z
Abacus TechnologiesBSC009NE2LS5IATMA110,164-----2019-12-06T00:07:36Z
Sierra ICBSC009NE2LS5IATMA1Contact-----2019-12-16T00:48:56Z

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